2SC5569-TD-E Transistor specifications and datasheet

NPN BJT | onsemi

NPNSOT-89General Purpose
VCEO
-
Ic Max
50V
Pd Max
7A
Gain
-55℃~+150℃
📄 View PDF Datasheet🛒 Buy from LCSC

Quick Reference

The 2SC5569-TD-E is a NPN bipolar transistor in a SOT-89 package, designed for high power applications. It supports a breakdown voltage of - and continuous collector current of 50V. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-89Physical mounting
VCEO-Breakdown voltage
IC Max50VCollector current
Pd Max7APower dissipation
Gain-55℃~+150℃DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo330MHzEmitter-Base voltage
Temp3.5WOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
BFU590QNPNSOT-89-15V200mA
LBTN180Y3T1GNPNSOT-89-80V1A
2SD1664NPNSOT-89-32V-
2SC4672NPNSOT-8950V2A500mW
2SC2383NPNSOT-89-160V-
PXT3904-HXYNPNSOT-89-50V-
CXT3019TR-HXYNPNSOT-89-80V-
BSR43TA-HXYNPNSOT-89-80V-
2SD882NPNSOT-89-30V3A
2SD882SQNPNSOT-89-30V3A
View all SOT-89 NPN Transistors ›