2SC5707-TL-E Transistor specifications and datasheet

NPN BJT | onsemi

NPNTO-252General Purpose
VCEO
-
Ic Max
50V
Pd Max
8A
Gain
-

Quick Reference

The 2SC5707-TL-E is a NPN bipolar transistor in a TO-252 package, designed for high power applications. It supports a breakdown voltage of - and continuous collector current of 50V. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252Physical mounting
VCEO-Breakdown voltage
IC Max50VCollector current
Pd Max8APower dissipation
Gain-DC current gain
Frequency200Transition speed
VCEsat330MHzSaturation voltage
Vebo100nAEmitter-Base voltage
Temp1WOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
2SD882NPNSOT-89-30V3A
2SD1815S-TL-ENPNTO-252-100V3A
D882MNPNTO-252-30V3A