MJD45H11 Transistor specifications and datasheet
PNPTO-252General Purpose
VCEO
80V
Ic Max
8A
Pd Max
20W
Gain
60
Quick Reference
The MJD45H11 is a PNP bipolar transistor in a TO-252 package, designed for high power applications. It supports a breakdown voltage of 80V and continuous collector current of 8A. This component is widely used in PNP switching and linear amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | GOODWORK | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| VCEO | 80V | Breakdown voltage |
| IC Max | 8A | Collector current |
| Pd Max | 20W | Power dissipation |
| Gain | 60 | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | - | Saturation voltage |
| Vebo | 50MHz | Emitter-Base voltage |
| Temp | -65℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD42CRLG | PNP | DPAK | - | 100V | 6A |
| MJD42CT4G(MS) | PNP | TO-252 | 100V | 6A | 1.25W |
| MJD42C | PNP | TO-252 | 100V | 6A | 20W |
| BRMJE172D | PNP | TO-252 | 80V | 6A | 12.5W |
| MJD127T4G(MS) | PNP | TO-252 | 100V | 8A | 1.5W |
| MJD127T4G-JSM | PNP | TO-252 | 100V | 8A | 1.75W |
| MJD127 | PNP | TO-252 | 100V | 5A | 65W |