ZXTN2011ZTA Transistor specifications and datasheet

NPN BJT | DIODES

NPNSOT-89General Purpose
VCEO
100V
Ic Max
4.5A
Pd Max
2.1W
Gain
100
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Quick Reference

The ZXTN2011ZTA is a NPN bipolar transistor in a SOT-89 package, designed for high power applications. It supports a breakdown voltage of 100V and continuous collector current of 4.5A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
VCEO100VBreakdown voltage
IC Max4.5ACollector current
Pd Max2.1WPower dissipation
Gain100DC current gain
Frequency130MHzTransition speed
VCEsat115mVSaturation voltage
Vebo7VEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
BCX56-16NPNSOT-89-3L80V1A500mW
BCX56-16NPNSOT-89-3L80V1A500mW
BCX56NPNSOT-8980V1A500mW
BCX56-16NPNSOT-89-3L80V1A500mW
NTE2428-HXYNPNSOT-8980V1A500mW
BCX56-16NPNSOT-89-3L80V1A500mW
DXTN26070CY-13NPNSOT-8970V2A2W
BCX56-16NPNSOT-89-3L80V1A500mW
H2SD1898T100RNPNSOT-8980V1A500mW
View all SOT-89 NPN Transistors ›